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AlGaN / GaN on Silicon HEMT Wafer with High 2DEG Mobility

GaN on silicon substrate wafer is offered with HEMT or template structure used in D-mode / E-mode power or RF application.
https://www.ganwafer.com/product/gan-on-silicon-hemt-wafer/ - Details - Similar

Fused Silica Optics, Fused Silica Optical Dome, Fused Sil

Fused Silica Optical Dome is a good choice in the Solar Instruments. It including ultraviolet fused silica and infrared fused silica. For the UV silica, it has a good transmittance from 180nm to2650nm, then High Quality
https://www.clzoptics.com/fused-silica-domes/ - Details - Similar

Optical Domes High Precision丨CLZ Optical

CLZ Optics' optical domes offer high precision, these advanced components guarantee superior performance in demanding environments. ensuring unmatched clarity and accuracy for applications in laser systems and scientific
https://www.clzoptics.com/optical-dome-components/ - Details - Similar

N-Type GaN (Gallium Nitride) Freestanding Substrate Wafer

N-type GaN free-standing wafer is undoped or doped with Silicon for high power and high frequency devices: satellites, power amplifiers.
https://www.ganwafer.com/product/n-type-freestanding-gan-substrate/ - Details - Similar

Freestanding GaN (Gallium Nitride) Substrate Grown by HVPE

Free-standing GaN substrate wafer with low dislocation density, uniform surface and low defect density is for UHB-LED and LD.
https://www.ganwafer.com/product-category/gan-wafer/freestanding-gan-substrate/ - Details - Similar

Epi-ready Semi-Insulating Freestanding GaN (Gallium Nitride) Substrate

Semi-insulating Freestanding GaN (Gallium Nitride) Substrate grown by HVPE is less or free macro defect density for RF device.
https://www.ganwafer.com/product/semi-insulating-freestanding-gan-substrate/ - Details - Similar

GaN Wafer Including Substrate, Template Epitaxy Wafer

GaN (gallium nitride) wafer – wide band gap material provides higher efficiency and power density for gallium nitride chips.
https://www.ganwafer.com/product-category/gan-wafer/ - Details - Similar

GaN on SiC (Silicon Carbdie) HEMT Wafer for RF or Power

The transport performance of heterostructure 2DEG GaN on SiC substrate wafer is better than GaN on Si / sapphire substrate.
https://www.ganwafer.com/product/gan-on-sic-hemt-wafer/ - Details - Similar

GaN on GaN Homoepitaxial Growth with Low Dislocation Density

GaN on GaN technology is grown GaN epi layers on homogeneous substrate, is an effective way to reduce dislocation density.
https://www.ganwafer.com/product/gan-on-gan/ - Details - Similar

GaN on Sapphire HEMT Wafer with High Power Density

GaN on Sapphire HEMT wafer is epitaxially grown with high-quality, high-uniformity AlGaN / GaN heterostructures for power or RF application.
https://www.ganwafer.com/product/gan-on-sapphire-hemt-wafer/ - Details - Similar

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